TPH4R008QM - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ. ) (3) Small output charge: Qoss = 60 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 3.1 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.5 to 3.5 V (VDS = 10 V, ID = 0.6 mA) 3. Packaging and Internal Circuit TPH4R008QM SOP Advance(N) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial p.

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Published: Oct 26, 2024 |