TPH4R008NH1 - Silicon N-channel MOSFET

Toshiba

Datasheet Details

(1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ. ) (3) Small output charge: Qoss = 77 nC (typ. ) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ. ) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit TPH4R008NH1 SOP Advance(N) 1, 2, 3: Source 4: Gate 5, 6, 7, 8: Drain ©2019-2020 1 Toshiba Electronic Devices & Storage Corporation Start of commercial.

📁 TPH4R008NH1 Similar Datasheet

TPH4805D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4805DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4805S - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4809D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4809DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4809S - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4812D - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)
TPH4812DA - 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

Other Datasheets by Toshiba

Published: Feb 28, 2025 |