Datasheet4U Logo Datasheet4U.com

TPH4R008NH1 Datasheet - Toshiba

TPH4R008NH1 Silicon N-channel MOSFET

TPH4R008NH1 Features

* (1) High-speed switching (2) Small gate charge: QSW = 18 nC (typ.) (3) Small output charge: Qoss = 77 nC (typ.) (4) Low drain-source on-resistance: RDS(ON) = 3.3 mΩ (typ.) (VGS = 10 V) (5) Low leakage current: IDSS = 10 µA (max) (VDS = 80 V) (6) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID =

TPH4R008NH1 Datasheet (499.53 KB)

Preview of TPH4R008NH1 PDF

Datasheet Details

Part number:

TPH4R008NH1

Manufacturer:

Toshiba ↗

File Size:

499.53 KB

Description:

Silicon n-channel mosfet.

📁 Related Datasheet

TPH4R008NH Silicon N-channel MOSFET (Toshiba)

TPH4R008QM Silicon N-channel MOSFET (Toshiba)

TPH4R003NL Silicon N-channel MOSFET (Toshiba)

TPH4R10ANL Silicon N-channel MOSFET (Toshiba)

TPH4R50ANH Field Effect Transistor (Toshiba)

TPH4R606NH MOSFETs (Toshiba)

TPH4805D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

TPH4805DA 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

TPH4805S 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

TPH4809D 2W 3KVDC Isolated Single & Dual Output DC/DC Converters (TOPPOWER)

TAGS

TPH4R008NH1 Silicon N-channel MOSFET Toshiba

Image Gallery

TPH4R008NH1 Datasheet Preview Page 2 TPH4R008NH1 Datasheet Preview Page 3

TPH4R008NH1 Distributor