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TPH4R606NH MOSFETs

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Description

TPH4R606NH MOSFETs Silicon N-channel MOS (U-MOS-H) TPH4R606NH 1.Applications * * * Switching Voltage Regulators Motor Drive.

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Features

* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 19 nC (typ. ) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ. ) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10

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