* (1) (2) (3) (4) (5) (6) Small footprint due to a small and thin package High-speed switching Small gate charge: QSW = 19 nC (typ.) Low drain-source on-resistance: RDS(ON) = 3.8 mΩ (typ.) (VGS = 10 V) Low leakage current: IDSS = 10 µA (max) (VDS = 60 V) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10
TPH4R606NH Datasheet (237.56 KB)
TPH4R606NH
237.56 KB
Mosfets.
TPH4R606NH
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPH4R606NH
1. Applications
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* Switching Voltage Regulators Motor Drive.
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