* (1) High-speed switching (2) Small gate charge: QSW = 22 nC (typ.) (3) Low drain-source on-resistance: RDS(ON) = 3.7 mΩ (typ.) (VGS = 10 V) (4) Low leakage current: IDSS = 10 µA (max) (VDS = 100 V) (5) Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1.0 mA) 3. Packaging and Internal Circuit
TPW4R50ANH Datasheet (799.85 KB)
TPW4R50ANH
799.85 KB
Silicon n-channel mosfet.
MOSFETs Silicon N-channel MOS (U-MOS-H)
TPW4R50ANH
1. Applications
* DC-DC Converters
* Switching Voltage Regulators
* Motor .
📁 Related Datasheet
TPW4R008NH Silicon N-channel MOSFET (Toshiba)
TPW4670 ISDN S-Bus Input/Output Transformer (Filtran)
TPW4671 ISDN S-Bus Input/Output Transformer (Filtran)
TPW100A Current Transducers (Topstek)
TPW100R500A 1000V Super-junction Power MOSFET (Unigroup)
TPW10A-LTC Current Transducers (Topstek)
TPW12.5A-LTC Current Transducers (Topstek)
TPW125A Current Transducers (Topstek)
TPW1500CNH Silicon N-Channel MOSFET (Toshiba)
TPW150A Current Transducers (Topstek)
