TRS24N65FB - SiC Schottky Barrier Diode

Name: TRS24N65FB
SKU: TRS24N65FB-1570408

Toshiba

The TRS24N65FB by Toshiba is a SiC Schottky Barrier Diode. Below is the official datasheet preview.

Datasheet Details

Part number	TRS24N65FB
Manufacturer	Toshiba
File Size	263.57 KB
Description	SiC Schottky Barrier Diode
Datasheet	TRS24N65FB-Toshiba.pdf
Additional preview pages of the TRS24N65FB datasheet.

(1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A (3) Low junction capacitance: Cj (Per Leg) = 46 pF (typ. ) (4) Low reverse current: IR (Per Leg) = 0.6 µA (typ. ) 3. Packaging and Internal Circuit TO-247 1: Anode 2: Cathode (heatsink) 3: Anode ©2019-2020 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2020-07 2020-07-03 Rev.1.0 TRS24N65FB 4. Absolute Maximum Ratings (Note) (Unle.

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Published: Feb 28, 2025 |