TRS24N65FB SiC Schottky Barrier Diode

Toshiba

Description

SiC Schottky Barrier Diode TRS24N65FB TRS24N65FB 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptib.

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Datasheet Specifications

Part number: TRS24N65FB
Manufacturer: Toshiba ↗
File Size: 263.57 KB
Datasheet: TRS24N65FB-Toshiba.pdf
Description: SiC Schottky Barrier Diode

Features

* (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A (3) Low junction capacitance: Cj (Per Leg) = 46 pF (typ. ) (4) Low reverse current: IR (Per Leg) = 0.6 µA (typ. ) 3. Packaging and Internal Circuit TO-247 1: Anode 2: Cat

Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

TRS24N65FB Distributors

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TRS24N65FB SiC Schottky Barrier Diode Toshiba

Toshiba TRS24N65FB-like datasheet