TRS24N65FB - SiC Schottky Barrier Diode
TRS24N65FB Features
* (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM (Per Leg) / (Both Legs) = 92 A / 184 A (3) Low junction capacitance: Cj (Per Leg) = 46 pF (typ.) (4) Low reverse current: IR (Per Leg) = 0.6 µA (typ.) 3. Packaging and Internal Circuit TO-247 1: Anode 2: Cat
