Part number:
TRS2E65H
Manufacturer:
File Size:
437.32 KB
Description:
Sic schottky barrier diode.
TRS2E65H Features
* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 6.5 nC (typ.) (4) Low reverse current: IR = 0.2 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L TRS2E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corp
Datasheet Details
TRS2E65H
437.32 KB
Sic schottky barrier diode.
TRS2E65H Distributor
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