* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 21A (Max) (3) The junction capacitance is small : Cj = 8.7pF (Typ.) (4) The reverse current is small. : IR = 0.2 µA (Typ.) 3. Packaging and Internal Circuit TRS2E65F TO-220-2L 1: Cathode 2: Anode ©2016-2017 Toshiba Ele
TRS2E65F Datasheet (249.91 KB)
TRS2E65F
249.91 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
TRS2E65F
1. Applications
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Suppli.
📁 Related Datasheet
TRS2E65H SiC Schottky Barrier Diode (Toshiba)
TRS2-0910 DC/DC Converter (TRACO POWER)
TRS2-0911 DC/DC Converter (TRACO POWER)
TRS2-0912 DC/DC Converter (TRACO POWER)
TRS2-0913 DC/DC Converter (TRACO POWER)
TRS2-0915 DC/DC Converter (TRACO POWER)
TRS2-0919 DC/DC Converter (TRACO POWER)
TRS2-0921 DC/DC Converter (TRACO POWER)
TRS2-0922 DC/DC Converter (TRACO POWER)
TRS2-0923 DC/DC Converter (TRACO POWER)
