* (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 pF (typ.) (4) Low reverse current: IR = 0.3 µA (typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS6A65F TO-220F-2L 1: Cathode 2: Anode
TRS6A65F Datasheet (269.64 KB)
TRS6A65F
269.64 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
TRS6A65F
1. Applications
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Suppli.
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