TRS6A65F Datasheet - Toshiba

TRS6A65F-Toshiba.pdf

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Datasheet Details

Part number:

TRS6A65F

Manufacturer:

Toshiba ↗

File Size:

269.64 KB

Description:

Sic schottky barrier diode.

TRS6A65F, SiC Schottky Barrier Diode

TRS6A65F Features

* (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 pF (typ.) (4) Low reverse current: IR = 0.3 µA (typ.) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS6A65F TO-220F-2L 1: Cathode 2: Anode

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TRS6A65F SiC Schottky Barrier Diode Toshiba

Toshiba TRS6A65F-like datasheet