TRS6A65F SiC Schottky Barrier Diode

Toshiba

Description

SiC Schottky Barrier Diode TRS6A65F 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppli.

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Datasheet Specifications

Part number: TRS6A65F
Manufacturer: Toshiba ↗
File Size: 269.64 KB
Datasheet: TRS6A65F-Toshiba.pdf
Description: SiC Schottky Barrier Diode

Features

* (1) Chip design of 2nd generation (2) High non-repetitive peak forward surge current: IFSM = 52 A (3) Low junction capacitance: Cj = 22 pF (typ. ) (4) Low reverse current: IR = 0.3 µA (typ. ) (5) Isolation package: TO-220F-2L 3. Packaging and Internal Circuit TRS6A65F TO-220F-2L 1: Cathode 2: Anode

Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

TRS6A65F Distributors

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TRS6A65F SiC Schottky Barrier Diode Toshiba

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