TRS6V65H Datasheet, Diode, Toshiba

✔ TRS6V65H Features

(1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 17 nC (typ.) (4) Low reverse current: IR = 1.1 µA (typ

✔ TRS6V65H Application

Power Factor Correction
Solar Inverters
Uninterruptible Power Supplies
DC-DC Converters 2. Features

PDF File Details

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Part number:

TRS6V65H

Manufacturer:

Toshiba ↗

File Size:

418.69kb

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📄 Datasheet

Description:

Sic schottky barrier diode.

📥 Download PDF (418.69kb)

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Stock and price

Toshiba America Electronic Components

DIODE SIL CARBIDE 650V 6A 4DFNEP

DigiKey

TRS6V65H,LQ

4783 In Stock

Qty : 1000 units

Unit Price : $1.24

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TRS6V65H SiC Schottky Barrier Diode Toshiba