* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 17 nC (typ.) (4) Low reverse current: IR = 1.1 µA (typ.) 3. Packaging and Internal Circuit DFN8x8 TRS6V65H 1, 2: N.C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic D
TRS6V65H Datasheet (418.69 KB)
TRS6V65H
418.69 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode TRS6V65H 1. Applications Power Factor Correction Solar Inverters Uninterruptible Power Suppli.
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