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TRS6E65F

SiC Schottky Barrier Diode

TRS6E65F Features

* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 55A (Max) (3) The junction capacitance is small : Cj = 22 pF (Typ.) (4) The reverse current is small. : IR = 0.3 µA (Typ.) 3. Packaging and Internal Circuit TRS6E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Ele

TRS6E65F Datasheet (285.77 KB)

Preview of TRS6E65F PDF

Datasheet Details

Part number:

TRS6E65F

Manufacturer:

Toshiba ↗

File Size:

285.77 KB

Description:

Sic schottky barrier diode.
SiC Schottky Barrier Diode TRS6E65F 1. Applications

* Power Factor Correction

* Solar Inverters

* Uninterruptible Power Suppli.

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TRS6E65F SiC Schottky Barrier Diode Toshiba

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