TRS6E65F SiC Schottky Barrier Diode

Toshiba

Description

SiC Schottky Barrier Diode TRS6E65F 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppli.

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Datasheet Specifications

Part number: TRS6E65F
Manufacturer: Toshiba ↗
File Size: 285.77 KB
Datasheet: TRS6E65F-Toshiba.pdf
Description: SiC Schottky Barrier Diode

Features

* (1) Chip design of 2nd generation. (2) High surge current capability : IFSM = 55A (Max) (3) The junction capacitance is small : Cj = 22 pF (Typ. ) (4) The reverse current is small. : IR = 0.3 µA (Typ. ) 3. Packaging and Internal Circuit TRS6E65F TO-220-2L 1: Cathode 2: Anode ©2016-2018 Toshiba Ele

Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

TRS6E65F Distributors

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TRS6E65F SiC Schottky Barrier Diode Toshiba

Toshiba TRS6E65F-like datasheet