Datasheet Specifications
- Part number
- TRS6E65H
- Manufacturer
- Toshiba ↗
- File Size
- 421.21 KB
- Datasheet
- TRS6E65H-Toshiba.pdf
- Description
- SiC Schottky Barrier Diode
Description
SiC Schottky Barrier Diode TRS6E65H 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppli.Features
* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 17 nC (typ. ) (4) Low reverse current: IR = 1.1 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS6E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage CorpoApplications
* Power Factor CorrectionTRS6E65H Distributors
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