* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 22 nC (typ.) (4) Low reverse current: IR = 1.5 µA (typ.) 3. Packaging and Internal Circuit TO-220-2L TRS8E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corpo
TRS8E65H Datasheet (461.54 KB)
TRS8E65H
461.54 KB
Sic schottky barrier diode.
SiC Schottky Barrier Diode
TRS8E65H
1. Applications
* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Suppli.
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