TRS8E65H SiC Schottky Barrier Diode

Toshiba

Description

SiC Schottky Barrier Diode TRS8E65H 1.Applications * Power Factor Correction * Solar Inverters * Uninterruptible Power Suppli.

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Datasheet Specifications

Part number: TRS8E65H
Manufacturer: Toshiba ↗
File Size: 461.54 KB
Datasheet: TRS8E65H-Toshiba.pdf
Description: SiC Schottky Barrier Diode

Features

* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ. ) (3) Low total capacitive charge: Qc = 22 nC (typ. ) (4) Low reverse current: IR = 1.5 µA (typ. ) 3. Packaging and Internal Circuit TO-220-2L TRS8E65H 1: Cathode 2: Anode ©2023 1 Toshiba Electronic Devices & Storage Corpo

Applications

* Power Factor Correction
* Solar Inverters
* Uninterruptible Power Supplies

TRS8E65H Distributors

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TRS8E65H SiC Schottky Barrier Diode Toshiba

Toshiba TRS8E65H-like datasheet