TRS8V65H - SiC Schottky Barrier Diode
TRS8V65H Features
* (1) Chip design of 3rd generation (2) Low forward voltage : VF = 1.2 V (typ.) (3) Low total capacitive charge: Qc = 22 nC (typ.) (4) Low reverse current: IR = 1.5 µA (typ.) 3. Packaging and Internal Circuit DFN8x8 TRS8V65H 1, 2: N.C. 3, 4: Anode 5: Cathode (heatsink) ©2023 1 Toshiba Electronic D
