Datasheet4U Logo Datasheet4U.com

1SS311 - Diode

1SS311 Description

TOSHIBA Diode Silicon Epitaxial Planar Type 1SS311 1SS311 High Voltage,High Speed Switching Applications z Low forward voltage : VF = 0.94V (typ.).

1SS311 Applications

* z Low forward voltage : VF = 0.94V (typ. ) z High voltage : VR = 400V (min) z Fast reverse recovery time : trr = 1.5ns (typ. ) z Small total capacitance : CT = 3.2pF (typ. ) z Small package : SC
* 59 Unit: mm Absolute Maximum Ratings (Ta = 25°C) Characteristic Symbol Rating Unit Ma

📥 Download Datasheet

Preview of 1SS311 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 1SS301 - SUPER HIGH SPEED SWITCHING DIODE (XIN SEMICONDUCTOR)
  • 1SS302 - ULTRA HIGH SPEED SWITCHING APPLICATIONS (Guangdong Kexin Industrial)
  • 1SS302A - Silicon Epitaxial Planar Switching Diodes (Toshiba)
  • 1SS307E - Diode (Toshiba)
  • 1SS321 - SILICON EPITAXIAL SCHOTTKY BARRIER DIODE (SEMTECH ELECTRONICS)
  • 1SS322 - LOW VOLTAGE HIGH SPEED SWITCHING DIODES (Kexin)
  • 1SS344 - SCHOTTKY B ARRIER DIODE (Jin Yu Semiconductor)
  • 1SS345 - Sillicon Epitaxial Schottky Barrier Diode (Sanyo Semicon Device)

📌 All Tags

Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS311-like datasheet

1SS311 Stock/Price