Datasheet4U Logo Datasheet4U.com

1SS369 Diode

1SS369 Description

TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type 1SS369 Low Voltage High Speed Switching Small package Low forward voltage: VF (3) = 0.97V (typ.).

1SS369 Applications

* of our products. No responsibility is assumed by TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORA

📥 Download Datasheet

Preview of 1SS369 PDF
datasheet Preview Page 2

📁 Related Datasheet

  • 1SS361CT - Silicon Epitaxial Planar Type Diode (Toshiba)
  • 1SS361FV - Silicon Epitaxial Planar Type Diode (Toshiba)
  • 1SS361LP3 - ULTRA-SMALL LEADLESS SURFACE MOUNT SWITCHING DIODE (Diodes)
  • 1SS361LPH4 - SURFACE MOUNT SWITCHING DIODE (Diodes)
  • 1SS361UDJ - DUAL SURFACE MOUNT SWITCHING DIODE (Diodes)
  • 1SS362FV - Silicon Epitaxial Planar Type Diode (Toshiba)
  • 1SS365 - Schottky Barrier Diode (Sanyo Semicon Device)
  • 1SS366 - Schottky Barrier Diode (Sanyo Semicon Device)

📌 All Tags

Diode Toshiba Semiconductor
Toshiba Semiconductor 1SS369-like datasheet