Datasheet4U Logo Datasheet4U.com

2SC2510 - Silicon NPN Epitaxial Planar Type Transistor

2SC2510 Description

TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL PLANAR TYPE 2SC2510 2SC2510 2~30MHz SSB LINEAR POWER AMPLIFIER APPLICATIONS (28V SUPPLY VOLTAGE USE) l Spe.

2SC2510 Applications

* (28V SUPPLY VOLTAGE USE) l Specified 28V, 28MHz Characteristics l Output Power : Po = 150WPEP (Min. ) l Power Gain : Gp = 12.2dB (Min. ) l Collector Efficiency : ηC = 35% (Min. ) l Intermodulation Distortion: IMD =
* 30dB (Max. ) Unit in mm MAXIMUM RATINGS (Tc = 25°C) CHARACTERISTIC Co

📥 Download Datasheet

Preview of 2SC2510 PDF
datasheet Preview Page 2 datasheet Preview Page 3

📁 Related Datasheet

  • 2SC2512 - Silicon NPN Triple Diffused Transistor (Hitachi Semiconductor)
  • 2SC2516 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2517 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2518 - NPN SILICON POWER TRANSISTOR (NEC)
  • 2SC2519 - Silicon NPN epitaxial planar type Transistor (Panasonic Semiconductor)
  • 2SC2501 - NPN Transistor (INCHANGE)
  • 2SC2502 - NPN Transistor (INCHANGE)
  • 2SC2504 - Transistor (Shindengen)

📌 All Tags

Toshiba Semiconductor 2SC2510-like datasheet