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DSR05S30CTB - Silicon Epitaxial Schottky Barrier Type Diode

DSR05S30CTB Description

DSR05S30CTB TOSHIBA Diode Silicon Epitaxial Schottky Barrier Type DSR05S30CTB High Speed Switching Application Unit: mm 0.25±0.02 0.65±0.02 Absolu.

DSR05S30CTB Applications

* including but not limited to (a) determining the appropriateness of the use of this Product in such design or applications; (b) evaluating and determining the applicability of any information contained in this document, or in charts, diagrams, programs, algorithms, sample application circuits, or a

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Silicon Epitaxial Schottky Barrier Type Diode Toshiba Semiconductor
Toshiba Semiconductor DSR05S30CTB-like datasheet