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TK16J55D Silicon N-Channel MOSFET

TK16J55D Description

TK16J55D TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (π-MOSⅦ) TK16J55D Switching Regulator Applications * Low drain-source ON-.

TK16J55D Applications

* Low drain-source ON-resistance: RDS (ON) = 0.31 Ω (typ. )
* High forward transfer admittance: |Yfs| = 6.5 S (typ. )
* Low leakage current: IDSS = 10 μA (max) (VDS = 550 V)
* Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA) 2.0 1.0 Unit: mm 15.9 MAX. Ф

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Silicon N-Channel MOSFET Toshiba Semiconductor
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