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TK8P25DA Silicon N-Channel MOSFET

TK8P25DA Description

MOSFETs Silicon N-Channel MOS (π-MOS) TK8P25DA 1.Applications * Switching Voltage Regulators 2..

TK8P25DA Features

* (1) Low drain-source on-resistance: RDS(ON) = 0.41 Ω (typ. ) (2) Low leakage current: IDSS = 10 µA (max) (VDS = 250 V) (3) Enhancement mode: Vth = 1.5 to 3.5 V (VDS = 10 V, ID = 1 mA) 3. Packaging and Internal Circuit TK8P25DA DPAK 1: Gate 2: Drain (Heatsink) 3: Source ©2015 Toshiba Corporation

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Silicon N-Channel MOSFET Toshiba Semiconductor
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