TC2996A GaAs Power FETs

Transcom

Description

www.DataSheet4U.net TC2996A REV1_20070503 1.6 GHz 12 W Flange Ceramic Packaged GaAs Power FETs .
The TC2996A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

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Datasheet Specifications

Part number: TC2996A
Manufacturer: Transcom
File Size: 100.43 KB
Datasheet: TC2996A_Transcom.pdf
Description: GaAs Power FETs

Features

* 12 W Typical Power at 1.6 GHz
* 13 dB Typical Linear Power Gain at 1.6 GHz
* High Linearity:IP3 = 50 dBm Typical
* High Power Added Efficiency:Nominal PAE of 40 %

Applications

* include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5, IDS = 2.5A @ 1.6GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point Linear Power Gain Intercept Point of the 3rd-order Intermodulation,

TC2996A Distributors

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TC2996A GaAs Power FETs Transcom

Transcom TC2996A-like datasheet