TC2997D 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs

Transcom

Description

www.DataSheet4U.com TC2997D REV3_20050418 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs .
The TC2997D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

📥 Download Datasheet

TC2997D Datasheet Preview — Preview of TC2997D PDF

Datasheet Specifications

Part number: TC2997D
Manufacturer: Transcom
File Size: 131.75 KB
Datasheet: TC2997D_Transcom.pdf
Description: 2.45 GHz 20 W Flange Ceramic Packaged GaAs Power FETs

Features

* 20W Typical Power at 2.45 GHz
* 10dB Typical Linear Power Gain at 2.45 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal PAE of 40 %

Applications

* include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5V, IDS = 5A @ 2.45GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3rd-order Intermodulation
* PSCL = 32 dBm Power Added Efficiency at 1dB Comp

TC2997D Distributors

📁 Related Datasheet

TC29V2H TC2-1TX+ TC2-72T+ TC20 TC20-11 TC20-x

📌 All Tags

TC2997D 2.45 GHz Flange Ceramic Packaged GaAs Power FETs Transcom

Transcom TC2997D-like datasheet