TC2996B GaAs Power FETs

Transcom

Description

www.DataSheet4U.net TC2996B REV1_20070503 1.9 GHz 12 W Flange Ceramic Packaged GaAs Power FETs .
The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

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Datasheet Specifications

Part number: TC2996B
Manufacturer: Transcom
File Size: 103.68 KB
Datasheet: TC2996B_Transcom.pdf
Description: GaAs Power FETs

Features

* 12 W Typical Power at 1.9 GHz
* 13 dB Typical Linear Power Gain at 1.9 GHz
* High Linearity: IP3 = 50 dBm Typical
* High Power Added Efficiency: Nominal PAE of 40 %

Applications

* include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS (@ 1.9 GHz) SYMBOL P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10 V, IDS = 2.5A Linear Power Gain VDS = 10 V, IDS = 2.5A Intercept Point of the 3 -

TC2996B Distributors

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TC2996B GaAs Power FETs Transcom

Transcom TC2996B-like datasheet