TC2996B Datasheet - Transcom

TC2996B GaAs Power FETs

The TC2996B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applicati.

TC2996B Features

* 12 W Typical Power at 1.9 GHz

* 13 dB Typical Linear Power Gain at 1.9 GHz

* High Linearity: IP3 = 50 dBm Typical

* High Power Added Efficiency: Nominal PAE of 40 %

* Suitable for High Reliability Application

* Lg = 1 µm, Wg = 30 mm

* 100 % D

TC2996B_Transcom.pdf

TC2996B Datasheet Preview — Preview of TC2996B PDF

Datasheet Details

Part number:

TC2996B

Manufacturer:

Transcom

File Size:

103.68 KB

Description:

Gaas power fets.

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TC2996B TC2996B GaAs Power FETs Transcom

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