TC2997B - GaAs Power FETs
The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applicati
TC2997B Features
* 20W Typical Power at 1.9 GHz
* 12 dB Typical Linear Power Gain at 1.9 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal PAE of 40 %
* Suitable for High Reliability Application
* Lg = 1 µm, Wg = 50 mm
* 100 % DC
