TC2997B Datasheet - Transcom

TC2997B GaAs Power FETs

The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applicati.

TC2997B Features

* 20W Typical Power at 1.9 GHz

* 12 dB Typical Linear Power Gain at 1.9 GHz

* High Linearity: IP3 = 52 dBm Typical

* High Power Added Efficiency: Nominal PAE of 40 %

* Suitable for High Reliability Application

* Lg = 1 µm, Wg = 50 mm

* 100 % DC

TC2997B_Transcom.pdf

TC2997B Datasheet Preview — Preview of TC2997B PDF

Datasheet Details

Part number:

TC2997B

Manufacturer:

Transcom

File Size:

103.27 KB

Description:

Gaas power fets.

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TC2997B TC2997B GaAs Power FETs Transcom

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