TC2997B GaAs Power FETs

Transcom

Description

www.DataSheet4U.net TC2997B REV0_20040412 1.9 GHz 20 W Flange Ceramic Packaged GaAs Power FETs .
The TC2997B is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

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Datasheet Specifications

Part number: TC2997B
Manufacturer: Transcom
File Size: 103.27 KB
Datasheet: TC2997B_Transcom.pdf
Description: GaAs Power FETs

Features

* 20W Typical Power at 1.9 GHz
* 12 dB Typical Linear Power Gain at 1.9 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal PAE of 40 %

Applications

* include high dynamic range power amplifier for commercials applications. ELECTRICAL SPECIFICATIONS ( @ 1.9 GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Output Power at 1dB Gain Compression Point VDS = 10.5 V, IDS = 5A Linear Power Gain VDS = 10.5 V, IDS = 5A Intercept Point of the 3

TC2997B Distributors

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TC2997B GaAs Power FETs Transcom

Transcom TC2997B-like datasheet