TC2997G GaAs Power FETs

Transcom

Description

www.DataSheet4U.net TC2997G PRE2_20071107 Preliminary 3.5 GHz 16 W Flange Ceramic Packaged GaAs Power FETs .
The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

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Datasheet Specifications

Part number: TC2997G
Manufacturer: Transcom
File Size: 164.02 KB
Datasheet: TC2997G_Transcom.pdf
Description: GaAs Power FETs

Features

* 16 W Typical Power at 3.5 GHz
* 9 dB Typical Linear Power Gain at 3.5 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal PAE of 37 %
* 100 % DC and RF Tested
* Flange Ceramic Package

TC2997G Distributors

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TC2997G GaAs Power FETs Transcom

Transcom TC2997G-like datasheet