TC2997G Datasheet - Transcom

TC2997G GaAs Power FETs

The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range .

TC2997G Features

* 16 W Typical Power at 3.5 GHz

* 9 dB Typical Linear Power Gain at 3.5 GHz

* High Linearity: IP3 = 52 dBm Typical

* High Power Added Efficiency: Nominal PAE of 37 %

* 100 % DC and RF Tested

* Flange Ceramic Package

* Suitable for WiMax and WLL applications PHOTO ENLARGE

TC2997G_Transcom.pdf

TC2997G Datasheet Preview — Preview of TC2997G PDF

Datasheet Details

Part number:

TC2997G

Manufacturer:

Transcom

File Size:

164.02 KB

Description:

Gaas power fets.

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TC2997G TC2997G GaAs Power FETs Transcom

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