TC2997G - GaAs Power FETs
The TC2997G is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applications include high dynamic range
TC2997G Features
* 16 W Typical Power at 3.5 GHz
* 9 dB Typical Linear Power Gain at 3.5 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal PAE of 37 %
* 100 % DC and RF Tested
* Flange Ceramic Package
* Suitable for WiMax and WLL applications PHOTO ENLARGE
