TC2997C GaAs Power FETs

Transcom

Description

www.DataSheet4U.net TC2997C PRE3_20050418 Preliminary 2.1 GHz 20 W Flange Ceramic Packaged GaAs Power FETs .
The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

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Datasheet Specifications

Part number: TC2997C
Manufacturer: Transcom
File Size: 97.23 KB
Datasheet: TC2997C_Transcom.pdf
Description: GaAs Power FETs

Features

* 20 W Typical Power at 2.1 GHz
* 12 dB Typical Linear Power Gain at 2.1 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal PAE of 40 %

Applications

* include high dynamic range power amplifier for commercial applications. ELECTRICAL SPECIFICATIONS (@ 2.1 GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3rd-order Intermodulation,
* PSCL = 32 dBm Power Added Efficiency at 1dB Compression Power Saturated

TC2997C Distributors

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TC2997C GaAs Power FETs Transcom

Transcom TC2997C-like datasheet