TC2997C Datasheet - Transcom

TC2997C GaAs Power FETs

The TC2997C is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applicati.

TC2997C Features

* 20 W Typical Power at 2.1 GHz

* 12 dB Typical Linear Power Gain at 2.1 GHz

* High Linearity: IP3 = 52 dBm Typical

* High Power Added Efficiency: Nominal PAE of 40 %

* Suitable for High Reliability Application

* Wg = 50 mm

* 100 % DC and RF Te

TC2997C_Transcom.pdf

TC2997C Datasheet Preview — Preview of TC2997C PDF

Datasheet Details

Part number:

TC2997C

Manufacturer:

Transcom

File Size:

97.23 KB

Description:

Gaas power fets.

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TC2997C TC2997C GaAs Power FETs Transcom

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