TC2997A - GaAs Power FETs
The TC2997A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.
The flange ceramic package provides the best thermal conductivity for the GaAs FET.
All devices are 100% DC and RF tested to assure consistent quality.
Typical applicati
TC2997A Features
* 20 W Typical Power at 1.6 GHz
* 13 dB Typical Linear Power Gain at 1.6 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal PAE of 40 %
* Suitable for High Reliability Application
* Wg = 50 mm
* 100 % DC and RF Te
