TC2997A Datasheet - Transcom

TC2997A GaAs Power FETs

The TC2997A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applicati.

TC2997A Features

* 20 W Typical Power at 1.6 GHz

* 13 dB Typical Linear Power Gain at 1.6 GHz

* High Linearity: IP3 = 52 dBm Typical

* High Power Added Efficiency: Nominal PAE of 40 %

* Suitable for High Reliability Application

* Wg = 50 mm

* 100 % DC and RF Te

TC2997A_Transcom.pdf

TC2997A Datasheet Preview — Preview of TC2997A PDF

Datasheet Details

Part number:

TC2997A

Manufacturer:

Transcom

File Size:

76.31 KB

Description:

Gaas power fets.

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TC2997A TC2997A GaAs Power FETs Transcom

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