TC2997A GaAs Power FETs

Transcom

Description

www.DataSheet4U.net TC2997A PRE4_20050708 Preliminary 1.6 GHz 20 W Flange Ceramic Packaged GaAs Power FETs .
The TC2997A is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

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Datasheet Specifications

Part number: TC2997A
Manufacturer: Transcom
File Size: 76.31 KB
Datasheet: TC2997A_Transcom.pdf
Description: GaAs Power FETs

Features

* 20 W Typical Power at 1.6 GHz
* 13 dB Typical Linear Power Gain at 1.6 GHz
* High Linearity: IP3 = 52 dBm Typical
* High Power Added Efficiency: Nominal PAE of 40 %

Applications

* include high dynamic range power amplifiers for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5, IDS = 5A @ 1.6GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3rd-order Intermodulation
* PSCL = 32 dBm Power Added Efficiency at 1dB Compres

TC2997A Distributors

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TC2997A GaAs Power FETs Transcom

Transcom TC2997A-like datasheet