Datasheet4U Logo Datasheet4U.com

TC2996D Datasheet - Transcom

TC2996D - 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

The flange ceramic package provides the best thermal conductivity for the GaAs FET.

All devices are 100% DC and RF tested to assure consistent quality.

Typical applicati

TC2996D Features

* 12 W Typical Power at 2.45 GHz

* 11 dB Typical Linear Power Gain at 2.45 GHz

* High Linearity: IP3 = 50 dBm Typical

* High Power Added Efficiency: Nominal PAE of 40 %

* Suitable for High Reliability Application

* Wg = 30 mm

* 100 % DC and RF

TC2996D_Transcom.pdf

Preview of TC2996D PDF
TC2996D Datasheet Preview Page 2 TC2996D Datasheet Preview Page 3

Datasheet Details

Part number:

TC2996D

Manufacturer:

Transcom

File Size:

119.23 KB

Description:

2.45 ghz 12 w flange ceramic packaged gaas power fets.

📁 Related Datasheet

📌 All Tags