TC2996D Datasheet - Transcom

TC2996D 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits. The flange ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applicati.

TC2996D Features

* 12 W Typical Power at 2.45 GHz

* 11 dB Typical Linear Power Gain at 2.45 GHz

* High Linearity: IP3 = 50 dBm Typical

* High Power Added Efficiency: Nominal PAE of 40 %

* Suitable for High Reliability Application

* Wg = 30 mm

* 100 % DC and RF

TC2996D_Transcom.pdf

TC2996D Datasheet Preview — Preview of TC2996D PDF

Datasheet Details

Part number:

TC2996D

Manufacturer:

Transcom

File Size:

119.23 KB

Description:

2.45 ghz 12 w flange ceramic packaged gaas power fets.

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TC2996D TC2996D 2.45 GHz Flange Ceramic Packaged GaAs Power FETs Transcom

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