TC2996D 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

Transcom

Description

www.DataSheet4U.com TC2996D REV2_20070503 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs .
The TC2996D is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor with input prematched circuits.

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Datasheet Specifications

Part number: TC2996D
Manufacturer: Transcom
File Size: 119.23 KB
Datasheet: TC2996D_Transcom.pdf
Description: 2.45 GHz 12 W Flange Ceramic Packaged GaAs Power FETs

Features

* 12 W Typical Power at 2.45 GHz
* 11 dB Typical Linear Power Gain at 2.45 GHz
* High Linearity: IP3 = 50 dBm Typical
* High Power Added Efficiency: Nominal PAE of 40 %

Applications

* include high dynamic range power amplifier for commercial applications. ELECTRICAL SPECIFICATIONS ( VDS = 10.5V, IDS = 2.5A @ 2.45 GHz ) Symbol P1dB GL IP3 PAE IDSS gm VP BVDGO Rth Linear Power Gain Intercept Point of the 3 -order Intermodulation,
* PSCL = 28 dBm Power Added Efficiency at 1dB Co

TC2996D Distributors

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TC2996D 2.45 GHz Flange Ceramic Packaged GaAs Power FETs Transcom

Transcom TC2996D-like datasheet