TC2998E GaAs Power FETs

Transcom

Description

www.DataSheet4U.net - Preliminary Datasheet - TC2998E PRE.1_01/21/2008 2.5-2.7GHz 20W Packaged GaAs Power FETs .
The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

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Datasheet Specifications

Part number: TC2998E
Manufacturer: Transcom
File Size: 95.11 KB
Datasheet: TC2998E_Transcom.pdf
Description: GaAs Power FETs

Applications

* include high dynamic range power amplifier for military or commercial applications. ELECTRICAL SPECIFICATIONS Symbol FREQ P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Operating Frequency Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4.5A, f=2.5
* 2.7GHz Linear Power Gain Vd =

TC2998E Distributors

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TC2998E GaAs Power FETs Transcom

Transcom TC2998E-like datasheet