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TC2998E GaAs Power FETs

TC2998E Description

www.DataSheet4U.net - Preliminary Datasheet - TC2998E PRE.1_01/21/2008 2.5-2.7GHz 20W Packaged GaAs Power FETs .
The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

TC2998E Applications

* include high dynamic range power amplifier for military or commercial applications. ELECTRICAL SPECIFICATIONS Symbol FREQ P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Operating Frequency Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4.5A, f=2.5
* 2.7GHz Linear Power Gain Vd =

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Datasheet Details

Part number
TC2998E
Manufacturer
Transcom
File Size
95.11 KB
Datasheet
TC2998E_Transcom.pdf
Description
GaAs Power FETs

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GaAs Power FETs Transcom
Transcom TC2998E-like datasheet