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TC2998E Datasheet - Transcom

TC2998E GaAs Power FETs

The TC2998E is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor. The ceramic package provides the best thermal conductivity for the GaAs FET. All devices are 100% DC and RF tested to assure consistent quality. Typical applications include high dynamic range power a.

TC2998E_Transcom.pdf

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Datasheet Details

Part number:

TC2998E

Manufacturer:

Transcom

File Size:

95.11 KB

Description:

Gaas power fets.

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TC2998E TC2998E GaAs Power FETs Transcom

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