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TC2998F GaAs Power FETs

TC2998F Description

www.DataSheet4U.net - Preliminary Datasheet - TC2998F PRE.3_01/21/2008 2.7-2.9GHz 20W Packaged GaAs Power FETs .
The TC2998F is a packaged Pseudomorphic High Electron Mobility Transistor (PHEMT) power transistor.

TC2998F Applications

* include high dynamic range power amplifier for commercial applications. ELECTRICAL SPECIFICATIONS Symbol FREQ P1dB GL IP3 PAE IDSS gm VP BVDGO Rth CONDITIONS Operating Frequency Output Power at 1dB Gain Compression Point, Vd = 10V, Id = 4.5A, f=2.7
* 2.9GHz Linear Power Gain Vd = 10V, Id = 4

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Datasheet Details

Part number
TC2998F
Manufacturer
Transcom
File Size
95.07 KB
Datasheet
TC2998F_Transcom.pdf
Description
GaAs Power FETs

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GaAs Power FETs Transcom
Transcom TC2998F-like datasheet