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TGA2216-SM Datasheet - TriQuint Semiconductor

10W GaN Power Amplifier

TGA2216-SM Features

* Frequency Range: 0.1

* 3.0GHz

* PSAT: >40dBm at PIN = 27dBm

* P1dB: >35dBm

* PAE: 50% @ midband

* Large Signal Gain: >13dB

* Small Signal Gain: 21dB

* Bias: VD = 40V, IDQ = 360mA, VG1 = -2.4V Typical, VG2 = +17.7V Typical

* Wideband Flat Gain and Power

TGA2216-SM General Description

Pad Configuration TriQuint’s TGA2216-SM is a wideband cascode amplifier fabricated on TriQuint’s production 0.25um GaN on SiC process. The cascode configuration offers exceptional wideband performance as well as supporting 40V operation. The TGA2216-SM operates from 0.1 - 3.0GHz and provides great.

TGA2216-SM Datasheet (762.19 KB)

Preview of TGA2216-SM PDF

Datasheet Details

Part number:

TGA2216-SM

Manufacturer:

TriQuint Semiconductor

File Size:

762.19 KB

Description:

10w gan power amplifier.
Applications Commercial and military radar Communications Electronic Warfare TGA2216-SM 0.1 3.0GHz 10W GaN Power Amplifie.

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TAGS

TGA2216-SM 10W GaN Power Amplifier TriQuint Semiconductor

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