Datasheet4U.com

TGF2023-2-01 - SiC HEMT

Product Overview

TriQuint Semiconductor

📥 Download Datasheet

TGF2023-2-01 SiC HEMT by TriQuint Semiconductor - Datasheet Preview — Datasheet preview – TGF2023-2-01

Datasheet Details

Part number	TGF2023-2-01
Manufacturer	TriQuint Semiconductor
File Size	2.20 MB
Description	SiC HEMT
Datasheet	TGF2023-2-01 Datasheet
Additional preview pages of the TGF2023-2-01 datasheet.

Product details

Description

The TriQuint TGF2023-2-01 is a discrete 1.25 mm GaN on SiC HEMT which operates from DC-18 GHz.

Features

Frequency Range: DC - 18 GHz.
38 dBm Nominal PSAT at 3 GHz.
71.6% Maximum PAE.
18 dB Nominal Power Gain at 3 GHz.
Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA.
Technology: TQGaN25 on SiC.
Chip Dimensions: 0.82 x 0.66 x 0.10 mm Functional Block Diagram General.

📁 Similar Datasheet

TGF2023-2-20 - 90 Watt Discrete Power GaN on SiC HEMT (TriQuint)
TGF2021-08 - DC - 12 GHz Discrete power pHEMT (Tyco Electronics)
TGF24A - Current Transducers (Topstek)
TGF25A - Current Transducers (Topstek)
TGF2977-SM - RF Transistor (qorvo)
TGF10A - Current Transducers (Topstek)
TGF11A - Current Transducers (Topstek)
TGF17A - Current Transducers (Topstek)

Other Datasheets by TriQuint Semiconductor

TGF2023-2-02 - 12 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-05 - 25 Watt Discrete Power GaN on SiC HEMT
TGF2023-2-10 - 50 Watt Discrete Power GaN on SiC HEMT
TGF2023-20 - 100 Watt Discrete Power GaN on SiC HEMT
TGF2023-01 - 6 Watt Discrete Power GaN on SiC HEMT
TGF2023-02 - 12 Watt Discrete Power GaN on SiC HEMT

Published: May 6, 2016 |