Part number:
TGF2023-2-01
Manufacturer:
TriQuint Semiconductor
File Size:
2.20 MB
Description:
Sic hemt.
* Frequency Range: DC - 18 GHz
* 38 dBm Nominal PSAT at 3 GHz
* 71.6% Maximum PAE
* 18 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA
* Technology: TQGaN25 on SiC
* Chip Dimensions: 0.82 x 0.66 x 0.10 mm Functional Bl
TGF2023-2-01 Datasheet (2.20 MB)
TGF2023-2-01
TriQuint Semiconductor
2.20 MB
Sic hemt.
📁 Related Datasheet
TGF2023-2-01 SiC HEMT (Qorvo)
TGF2023-2-02 12 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-2-05 25 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-2-10 50 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-2-20 90 Watt Discrete Power GaN on SiC HEMT (TriQuint)
TGF2023-2-20 SiC HEMT (Qorvo)
TGF2023-20 100 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-01 6 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-02 12 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)
TGF2023-05 25 Watt Discrete Power GaN on SiC HEMT (TriQuint Semiconductor)