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TGF2023-2-01 SiC HEMT

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Description

Applications * Defense & Aerospace * Broadband Wireless TGF2023-2-01 6 Watt Discrete Power GaN on SiC HEMT Product .
The TriQuint TGF2023-2-01 is a discrete 1.

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Features

* Frequency Range: DC - 18 GHz
* 38 dBm Nominal PSAT at 3 GHz
* 71.6% Maximum PAE
* 18 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA
* Technology: TQGaN25 on SiC
* Chip Dimensions: 0.82 x 0.66 x 0.10 mm Functional Bl

Applications

* Defense & Aerospace

TGF2023-2-01 Distributors

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TGF2023-2-01 SiC HEMT TriQuint Semiconductor
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