TGF2023-2-01 Datasheet - TriQuint Semiconductor

TGF2023-2-01 SiC HEMT

TGF2023-2-01 Features

* Frequency Range: DC - 18 GHz

* 38 dBm Nominal PSAT at 3 GHz

* 71.6% Maximum PAE

* 18 dB Nominal Power Gain at 3 GHz

* Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA

* Technology: TQGaN25 on SiC

* Chip Dimensions: 0.82 x 0.66 x 0.10 mm Functional Bl

Datasheet Details

TGF2023-2-01

TriQuint Semiconductor

2.20 MB

Sic hemt.

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TGF2023-2-01 TGF2023-2-01 SiC HEMT TriQuint Semiconductor

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