TGF2023-2-01 - SiC HEMT
TGF2023-2-01 Features
* Frequency Range: DC - 18 GHz
* 38 dBm Nominal PSAT at 3 GHz
* 71.6% Maximum PAE
* 18 dB Nominal Power Gain at 3 GHz
* Bias: VD = 12 - 32 V, IDQ = 25 - 125 mA
* Technology: TQGaN25 on SiC
* Chip Dimensions: 0.82 x 0.66 x 0.10 mm Functional Bl
