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AGR21180EF Transistor

AGR21180EF Description

AGR21180EF 180 W, 2.110 GHz *2.170 GHz, N-Channel E-Mode, Lateral MOSFET Introduction The AGR21180EF is a high-voltage, gold-metalized, lateral.

AGR21180EF Features

* Typical performance for two carrier 3GPP W-CDMA systems. F1 = 2135 MHz and F2 = 2145 MHz with 3.84 MHz channel bandwidth (BW), adjacent channel BW = 3.84 MHz at www. DataSheet4U. com F1
* 5 MHz and F2 + 5 MHz. Third-order distortion is measured over 3.84 MHz BW at F1
* 10 MHz and F2 +

AGR21180EF Applications

* Table 1. Thermal Characteristics Parameter Thermal Resistance, Junction to Case Sym Rı JC Value 0.35 Unit °C/W Table 2. Absolute Maximum Ratings
* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C Derate Above 25 ˇ C Operating Junction Temperature Storage Temper

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