TSB60R190S1

N-Channel MOSFET

Truesemi

TSB60R190S1 Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.16Ω

* Ultra Low gate charge (typ. Qg = 70nC)

* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Dra

TSB60R190S1 General Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, .

TSB60R190S1 Datasheet (1.11 MB)

TSB60R190S1 Datasheet Preview — Preview of TSB60R190S1 PDF

Datasheet Details

Part number:

TSB60R190S1

Manufacturer:

Truesemi

File Size:

1.11 MB

Description:

N-channel mosfet.

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TSB60R190S1 N-Channel MOSFET Truesemi

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TSB60R190S1 Features

TSB60R190S1 General Description

Datasheet Details

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Description:

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