TSB60R190S1 - N-Channel MOSFET

Truesemi

TSB60R190S1 Datasheet Preview — Preview of TSB60R190S1 PDF

Datasheet Details

Part number	TSB60R190S1
Manufacturer	Truesemi
File Size	1.11 MB
Description	N-Channel MOSFET
Datasheet	TSB60R190S1-Truesemi.pdf

TSB60R190S1 Product details

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

650V @TJ = 150 ℃.
Typ. RDS(on) = 0.16Ω.
Ultra Low gate charge (typ. Qg = 70nC).
100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Av.

📁 TSB60R190S1 Similar Datasheet

TSB611 - 36V operational amplifier (STMicroelectronics)
TSB612 - 36V operational amplifier (STMicroelectronics)
TSB621 - 36V operational amplifier (STMicroelectronics)
TSB622 - 36V operational amplifier (STMicroelectronics)
TSB624 - 36V operational amplifier (STMicroelectronics)
TSB-1460A - Unidirectional Back Electret Condenser Microphone (JLI)
TSB-L - OPTICAL PRECISION TUBE SENSOR (STM)
TSB1132 - Low Frequency PNP Transistor (Taiwan Semiconductor Company)

Other Datasheets by Truesemi

TSB65R500S1 - N-Channel MOSFET
TSB65R700S1 - N-Channel MOSFET
TSB10N60M - N-Channel MOSFET
TSB10N60S - N-Channel MOSFET
TSB10N65M - N-Channel MOSFET
TSB11N60S - N-Channel MOSFET

Published: Apr 13, 2017 |