Datasheet Details
Part number:
TSB60R190S1
Manufacturer:
Truesemi
File Size:
1.11 MB
Description:
N-Channel MOSFET
Features
* 650V @TJ = 150 ℃
* Typ. RDS(on) = 0.16Ω
* Ultra Low gate charge (typ. Qg = 70nC)
* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Dra
TSB60R190S1, N-Channel MOSFET
Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.
This advanced technology has been tailored to minimize conduction loss, provide superior switching performance,
TSB60R190S1 Distributor
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