TSB60R190S1 Datasheet - Truesemi

TSB60R190S1 N-Channel MOSFET

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, .

TSB60R190S1 Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.16Ω

* Ultra Low gate charge (typ. Qg = 70nC)

* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Dra

TSB60R190S1-Truesemi.pdf