TSB65R700S1 - N-Channel MOSFET

Truesemi

TSB65R700S1 Datasheet Preview — Preview of TSB65R700S1 PDF

Datasheet Details

Part number	TSB65R700S1
Manufacturer	Truesemi
File Size	651.76 KB
Description	N-Channel MOSFET
Datasheet	TSB65R700S1-Truesemi.pdf

TSB65R700S1 Product details

Description

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

Features

700V @TJ = 150 ℃.
Typ. RDS(on) = 0.6Ω.
Ultra Low gate charge (typ. Qg = 25nC).
100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Continuous (TC = 100℃) Drain Current.
Pulsed (Note 1) Gate-Source voltage Single Pulsed Avalanche Energy (Note 2) Avalanche Current (Note 1) Repetitive Avala.

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Published: Apr 13, 2017 |