TSB7N60M - N-Channel MOSFET

Truesemi

Datasheet Details

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency switched mode power supplies, active power factor correction based on half bridge topology.
7.0A,600V,Max. RDS(on)=1.3 Ω @ VGS =10V.
Low gate cha.

📁 TSB7N60M Similar Datasheet

Other Datasheets by Truesemi

Published: Apr 12, 2017 |