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TSB7N80M N-Channel MOSFET

TSB7N80M Description

TSB7N80M / TSI7N80M TSB7N80M / TSI7N80M 800V N-Channel MOSFET General .
This Power MOSFET is produced using True semi‘s advanced planar stripe DMOS technology.

TSB7N80M Features

* - 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

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Datasheet Details

Part number
TSB7N80M
Manufacturer
Truesemi
File Size
263.77 KB
Datasheet
TSB7N80M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
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