TSB7N80M Datasheet - Truesemi

TSB7N80M, N-Channel MOSFET

TSB7N80M / TSI7N80M TSB7N80M / TSI7N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using True semi‘s advanced planar st

Features

* - 7.0A, 800V, RDS(on) = 1.9Ω@VGS = 10 V - Low gate charge ( typical 40nC) - High ruggedness - Fast switching - 100% avalanche tested - Improved dv/dt capability D D D2-PAK GS GDS I2-PAK G S Absolute Maximum Ratings TC = 25°C unless otherwise noted Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD

TSB7N80M-Truesemi.pdf