TSD80R1K3S1 Datasheet (Truesemi)

TSD80R1K3S1, N-Channel MOSFET

Truesemi SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance,

TSD80R1K3S1 Features

* 850V @TJ = 150 ℃

* Typ. RDS(on) = 1.1Ω

* Ultra Low gate charge (typ. Qg = 15nC)

* 100% avalanche tested TSD80R1K3S1 TSU80R1K3S1 TO-252 Absolute Maximum Ratings TO-251 Symbol VDSS ID IDM VGSS EAS IAR EAR Parameter Drain-Source Voltage Drain Current -Continuou