TSF16N50MR Datasheet - Truesemi

N-Channel MOSFET

TSF16N50MR Features

* 16.0A,500V,Max.RDS(on)=0.37 Ω @ VGS =10V

* Low gate charge(typical 32nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSF16N50MR General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF16N50MR Datasheet (425.71 KB)

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Datasheet Details

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TSF16N50MR

Manufacturer:

Truesemi

File Size:

425.71 KB

Description:

N-channel mosfet.

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TSF16N50MR N-Channel MOSFET Truesemi

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TSF16N50MR Features

TSF16N50MR General Description

Datasheet Details

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