TSF16N65M

N-Channel MOSFET

Truesemi

TSF16N65M Features

* 16A,650V,Max.RDS(on)=0.5 Ω @ VGS =10V

* Low gate charge(typical 50nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR I

TSF16N65M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF16N65M Datasheet (386.06 KB)

TSF16N65M Datasheet Preview — Preview of TSF16N65M PDF

Datasheet Details

Part number:

TSF16N65M

Manufacturer:

Truesemi

File Size:

386.06 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSF16N65MR N-Channel MOSFET (Truesemi)

TSF16N60MR N-Channel MOSFET (Truesemi)

TSF16N50M 500V N-Channel MOSFET (Truesemi)

TSF16N50MR N-Channel MOSFET (Truesemi)

TSF163D00A-D2 Saw Filters (Token)

TSF163D00B-S4 Saw Filters (Token)

TSF10H100C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H120C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H150C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H200C Trench Schottky Rectifier (Taiwan Semiconductor)

TAGS

TSF16N65M N-Channel MOSFET Truesemi

Image Gallery

TSF16N65M Features

TSF16N65M General Description

Datasheet Details

File Size:

Description:

TSF16N65M Distributor