TSP13N50M

N-Channel MOSFET

Truesemi

TSP13N50M Features

* 13A,500V,Max.RDS(on)=0.48 Ω @ VGS =10V

* Low gate charge(typical 45nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EAR

TSP13N50M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSP13N50M Datasheet (762.47 KB)