l l l l l l l
5W
PH2323-5
v2.00
NPN Silicon Microwave Power Transistor Common Base Configuration Class C Operation Interdigitated Geometry Diffused Emitter Ballasting Resistors Gold Metalization System Hermetic Metal/Ceramic Package
’ . I
820 (20.83> .3:: d:1.271 1
573 K. z.48) :
, I i I /
Absolute Maximum Ratings at 25°C
Electrical Characteristics
at 25°C
Test Fixture Impedances
F(GHz)
2.30 1
TSiT
F!XiURE IVWT / Zi= 3
;TST.