P1006BT Datasheet - UNIKC

P1006BT N-Channel MOSFET

P1006BT N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) ID 60V 10mΩ @VGS = 10V 61A TO-220 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 60 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC= 25 °C TC= 100 °C ID 61 39 IDM 150 Avalanche Current IAS 39 Avalanche Energy L = 0.1 mH EAS 77 Power Dissipation TC= 25 °C TC= 100°C PD 83 33 Junc.

P1006BT Datasheet (453.42 KB)