P2003BVG Datasheet - UNIKC

P2003BVG N-Channel Enhancement Mode MOSFET

P2003BVG N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 20mΩ @VGS = 10V ID 9A SOP-8 100% Rg tested 100% UIS tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±25 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 9 7 32 Avalanche Current IAS 18.5 Avalanche Energy L =0.1mH EAS 17 Power Dissipation TA= 25 °C TA =7.

P2003BVG Datasheet (767.94 KB)