PD648BA - N-Channel MOSFET
PD648BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 3.9mΩ @VGS = 10V ID 94A TO-252 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current2 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 94 59 170 Avalanche Current IAS 36 Avalanche Energy L =0.1mH EAS 64 Power Dissipation TC = 25 °C TC = 100 °C PD 62.5 25 Junct
