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PE674DT Datasheet - UNIKC

PE674DT MOSFET

PE674DT Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) Q2 30V 7mΩ @VGS = 10V Q1 30V 10.5mΩ @VGS = 10V ID 39A 31A PDFN 3X3S ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL Q2 Q1 Drain-Source Voltage VDS 30 30 Gate-Source Voltage VGS ±20 ±20 Continuous Drain Current3 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 39 31 25 20 50 45 Continuous Drain Current3 TA = 25 °C TA = 70 °C ID 12 9.5 10 7.6 A.

PE674DT Datasheet (1.07 MB)