PE6B0SA Datasheet - UNIKC

PE6B0SA MOSFET

PE6B0SA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 5mΩ @VGS = 10V ID 42A PDFN 3X3P ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 TC = 25 °C 42 Continuous Drain Current3 TC = 100 °C TA = 25 °C ID 26 16 Pulsed Drain Current1 TA= 70 °C IDM 13 80 Avalanche Current IAS 25 Avalanche Energy L =0.1mH EAS 31 TC = 25 °C 17.8 Power Diss.

PE6B0SA Datasheet (824.68 KB)