PE6D0BA Datasheet - UNIKC

PE6D0BA MOSFET

PE6D0BA N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 30V 10.5mΩ @VGS = 10V ID 32A PDFN 3X3P 100% UIS Tested 100% Rg Tested ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 30 Gate-Source Voltage VGS ±20 Continuous Drain Current4 Pulsed Drain Current1 TC = 25 °C TC = 100 °C ID IDM 32 20 80 Continuous Drain Current TA = 25 °C TA = 70 °C ID 13 10 Avalanche Current IAS 21 Ava.

PE6D0BA Datasheet (797.79 KB)