PF610BC - N-Channel MOSFET
PF610BC N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 1.1A SOT-89 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 1.1 0.9 5 Avalanche Current IAS 3.8 Avalanche Energy L =1mH EAS 7.2 Power Dissipation TA = 25 °C TA = 70 °C PD 1.9 1.2 Junctio
