PF610BL - N-Channel Enhancement Mode MOSFET
PF610BL N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 0.9A SOT- 223 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA = 70 °C ID IDM 0.9 0.5 5.4 Avalanche Current IAS 3.8 Avalanche Energy L = 1mH EAS 7.2 Power Dissipation TA = 25 °C TA = 70 °C PD 1.3 0.5 Operating Junction & Storage Te
