PF610HV - MOSFET
PF610HV Dual N-Channel Enhancement Mode MOSFET PRODUCT SUMMARY V(BR)DSS RDS(ON) 100V 0.7Ω @VGS = 10V ID 1A SOP-8 ABSOLUTE MAXIMUM RATINGS (TA = 25 °C Unless Otherwise Noted) PARAMETERS/TEST CONDITIONS SYMBOL LIMITS Drain-Source Voltage VDS 100 Gate-Source Voltage VGS ±20 Continuous Drain Current Pulsed Drain Current1 TA = 25 °C TA= 70 °C ID IDM 1 0.8 4 Avalanche Current IAS 3.9 Avalanche Energy L = 1mH EAS 7.6 Power Dissipation TA = 25 °C TA= 70°C PD 1.6 1 Operating
